Uimhir Pháirt QH8KB6TCR Déantóir ROHM Semiconductor Catagóirí MOSFET RoHS Bileog sonraí QH8KB6TCR Cur síos MOSFET 40V N&N-CHANNEL
Déantóir ROHM Semiconductor Catagóirí MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 10.6 nC Rds On - Drain-Source Resistance 17.7 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V