Uimhir Pháirt QH8KA1TCR Déantóir ROHM Semiconductor Catagóirí MOSFET RoHS Bileog sonraí QH8KA1TCR Cur síos MOSFET 30V Nch+Nch Si MOSFET
Déantóir ROHM Semiconductor Catagóirí MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2.4 W Qg - Gate Charge 3 NC Rds On - Drain-Source Resistance 56 mOhms, 56 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V