Uimhir Pháirt RQ3G100GNTB Déantóir ROHM Semiconductor Catagóirí MOSFET RoHS Bileog sonraí RQ3G100GNTB Cur síos MOSFET Nch 40V 10A Power MOSFET
Déantóir ROHM Semiconductor Catagóirí MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 8.4 nC Rds On - Drain-Source Resistance 11 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V