SI8821EDB-T2-E1

Tá Íomhánna le haghaidh tagartha amháin
Uimhir Pháirt
SI8821EDB-T2-E1
Déantóir
Vishay Semiconductors
Catagóirí
MOSFET
RoHS
Bileog sonraí
Cur síos
MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8

Sonraíochtaí

Déantóir
Vishay Semiconductors
Catagóirí
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
2.3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
MicroFoot-4
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
900 MW
Qg - Gate Charge
17 nC
Rds On - Drain-Source Resistance
105 mOhms
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage
1.3 V

Léirmheasanna is Déanaí

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything is excellent! recommend this seller!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

the photo in comparison with cheap. Delivery fast

Long Service and Russia!

Cheannaigh daoine ag breathnú SI8821EDB-T2-E1 ansin

Eochairfhocail ghaolmhara le haghaidh SI88

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