Uimhir Pháirt SI8821EDB-T2-E1 Déantóir Vishay Semiconductors Catagóirí MOSFET RoHS Bileog sonraí SI8821EDB-T2-E1 Cur síos MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
Déantóir Vishay Semiconductors Catagóirí MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2.3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case MicroFoot-4 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 900 MW Qg - Gate Charge 17 nC Rds On - Drain-Source Resistance 105 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.3 V